N-Channel Power MOSFET featuring 60V drain-source breakdown voltage and 20A continuous drain current. This TO-220AB packaged device offers a low 60mΩ drain-source on-resistance and 53W maximum power dissipation. Operating across a wide temperature range from -55°C to 175°C, it includes fast switching characteristics with a 5ns turn-on delay and 20ns fall time. Through-hole mounting and RoHS compliance are standard.
PackageTO-220AB
Current Rating20A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Onsemi FQP20N06 technical specifications.
General
| Package/Case | TO-220AB |
| Continuous Drain Current (ID) | 20A |
| Current Rating | 20A |
| Drain to Source Breakdown Voltage | 60V |
| Drain to Source Resistance | 60mR |
| Drain to Source Voltage (Vdss) | 60V |
| Drain-source On Resistance-Max | 70mR |
| Element Configuration | Single |
| Fall Time | 20ns |
| Gate to Source Voltage (Vgs) | 25V |
| Height | 9.4mm |
| Input Capacitance | 590pF |
| Lead Free | Lead Free |
| Length | 10.1mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 53W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 53W |
| Radiation Hardening | No |
| Rds On Max | 60mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | QFET® |
| Threshold Voltage | 4V |
| Turn-Off Delay Time | 20ns |
| Turn-On Delay Time | 5ns |
| DC Rated Voltage | 60V |
| Weight | 1.8g |
| Width | 4.7mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FQP20N06 Datasheet
Download the complete datasheet for Onsemi FQP20N06 to view detailed technical specifications.
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