N-channel Power MOSFET, logic-level gate drive, featuring 60V drain-source breakdown voltage and a continuous drain current of 21A. This TO-220AB packaged component offers a maximum drain-source on-resistance of 55mΩ at 10Vgs. It operates within a temperature range of -55°C to 175°C and has a maximum power dissipation of 53W. Key switching characteristics include a turn-on delay time of 10ns and a fall time of 70ns.
PackageTO-220AB
Current Rating21A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Onsemi FQP20N06L technical specifications.
General
| Package/Case | TO-220AB |
| Continuous Drain Current (ID) | 21A |
| Current Rating | 21A |
| Drain to Source Breakdown Voltage | 60V |
| Drain to Source Resistance | 42mR |
| Drain to Source Voltage (Vdss) | 60V |
| Drain-source On Resistance-Max | 70mR |
| Element Configuration | Single |
| Fall Time | 70ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 9.4mm |
| Input Capacitance | 630pF |
| Lead Free | Lead Free |
| Length | 10.1mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 53W |
| Mount | Through Hole |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 53W |
| Radiation Hardening | No |
| Rds On Max | 55mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | QFET® |
| Threshold Voltage | 2.5V |
| Turn-Off Delay Time | 35ns |
| Turn-On Delay Time | 10ns |
| DC Rated Voltage | 60V |
| Weight | 1.8g |
| Width | 4.7mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FQP20N06L Datasheet
Download the complete datasheet for Onsemi FQP20N06L to view detailed technical specifications.
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