N-Channel Power MOSFET, QFET® series, featuring 80V drain-source breakdown voltage and 24A continuous drain current. This single-element transistor offers a low 60mΩ drain-to-source resistance (Rds On Max) and 75W maximum power dissipation. Designed for through-hole mounting in a TO-220AB package, it operates from -55°C to 175°C and includes fast switching characteristics with turn-on delay of 10ns and fall time of 35ns. The component is RoHS compliant and lead-free.
PackageTO-220AB
Current Rating24A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Onsemi FQP24N08 technical specifications.
General
| Package/Case | TO-220AB |
| Continuous Drain Current (ID) | 24A |
| Current Rating | 24A |
| Drain to Source Breakdown Voltage | 80V |
| Drain to Source Resistance | 60mR |
| Drain to Source Voltage (Vdss) | 80V |
| Element Configuration | Single |
| Fall Time | 35ns |
| Gate to Source Voltage (Vgs) | 25V |
| Input Capacitance | 750pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 75W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 75W |
| Radiation Hardening | No |
| Rds On Max | 60mR |
| RoHS Compliant | Yes |
| Series | QFET® |
| Turn-Off Delay Time | 30ns |
| Turn-On Delay Time | 10ns |
| DC Rated Voltage | 80V |
| Weight | 1.8g |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FQP24N08 Datasheet
Download the complete datasheet for Onsemi FQP24N08 to view detailed technical specifications.
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