N-Channel Power MOSFET, QFET® series, featuring a 250V drain-to-source breakdown voltage and a continuous drain current of 25.5A. This through-hole component offers a low on-resistance of 110mΩ at a nominal Vgs of 5V, with a maximum power dissipation of 180W. Operating across a temperature range of -55°C to 150°C, it includes fast switching characteristics with turn-on delay at 32ns and fall time at 120ns. Packaged in a TO-220AB case, this RoHS compliant device is suitable for demanding power applications.
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Onsemi FQP27N25 technical specifications.
| Package/Case | TO-220AB |
| Continuous Drain Current (ID) | 25.5A |
| Current Rating | 25.5A |
| Drain to Source Breakdown Voltage | 250V |
| Drain to Source Resistance | 110mR |
| Drain to Source Voltage (Vdss) | 250V |
| Element Configuration | Single |
| Fall Time | 120ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 9.4mm |
| Input Capacitance | 2.45nF |
| Lead Free | Lead Free |
| Length | 10.1mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 180W |
| Mount | Through Hole |
| Nominal Vgs | 5V |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 180W |
| Radiation Hardening | No |
| Rds On Max | 110mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | QFET® |
| Turn-Off Delay Time | 80ns |
| Turn-On Delay Time | 32ns |
| DC Rated Voltage | 250V |
| Weight | 1.8g |
| Width | 4.7mm |
| RoHS | Compliant |
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