FQP27P06-SW82127

P-CH MOSFET 60V 27A TO-220 TH

P-channel enhancement mode power MOSFET featuring 60V drain-source voltage and 27A continuous drain current. This single-element DMOS transistor is housed in a 3-pin TO-220 package with a tab, designed for through-hole mounting. Key specifications include a maximum drain-source on-resistance of 70 mOhm at 10V, typical gate charge of 33 nC, and typical input capacitance of 1100 pF at 25V. Operating temperature range is -55°C to 175°C, with a maximum power dissipation of 120W.

PackageTO-220

MountingThrough Hole

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Technical Specifications

Onsemi FQP27P06-SW82127 technical specifications.

General

Basic Package Type	Through Hole
Package Family Name	TO-220
Package/Case	TO-220
Package Description	Transistor Outline Package
Pin Count	3
PCB	3
Tab	Tab
Package Length (mm)	10.67(Max)
Package Width (mm)	4.83(Max)
Package Height (mm)	9.4(Max)
Seated Plane Height (mm)	22.86(Max)
Pin Pitch (mm)	2.54
Package Material	Plastic
Mounting	Through Hole
Configuration	Single
Category	Power MOSFET
Channel Mode	Enhancement
Channel Type	P
Number of Elements per Chip	1
Process Technology	DMOS
Maximum Drain Source Voltage	60V
Maximum Gate Source Voltage	±25V
Maximum Continuous Drain Current	27A
Maximum Drain Source Resistance	70@10VmOhm
Typical Gate Charge @ Vgs	33@10VnC
Typical Gate Charge @ 10V	33nC
Typical Input Capacitance @ Vds	1100@25VpF
Maximum Power Dissipation	120000mW
Min Operating Temperature	-55°C
Max Operating Temperature	175°C

Compliance

Cage Code	5V1P1
EU RoHS	Yes with Exemption
HTS Code	8541290095
Schedule B	8541290080
ECCN	EAR99
Automotive	No
AEC Qualified	No
PPAP	No
RoHS Versions	2011/65/EU, 2015/863

Datasheet

This datasheet cannot be embedded due to technical restrictions.

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