
This N-channel MOSFET has a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It features a drain to source breakdown voltage of 600V and a continuous drain current of 2.4A. The device is packaged in a TO-220-3 case and is lead-free and RoHS compliant. It has a maximum power dissipation of 64W and a gate to source voltage of 30V.
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Onsemi FQP2N60 technical specifications.
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 2.4A |
| Current Rating | 2.4A |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 4.7R |
| Drain to Source Voltage (Vdss) | 600V |
| Fall Time | 25ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 350pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 64W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 64W |
| Rds On Max | 4.7R |
| RoHS Compliant | Yes |
| Series | QFET® |
| Turn-Off Delay Time | 20ns |
| DC Rated Voltage | 600V |
| RoHS | Compliant |
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