N-Channel Power MOSFET, QFET® series, featuring a 600V drain-to-source breakdown voltage and a continuous drain current of 2A. This through-hole component offers a low on-resistance of 4.7Ω and a maximum power dissipation of 54W. It operates within a temperature range of -55°C to 150°C and is packaged in a TO-220AB case. Key switching characteristics include a 9ns turn-on delay and a 28ns fall time, with a gate-to-source voltage rating of 30V.
PackageTO-220AB
Current Rating2A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Onsemi FQP2N60C technical specifications.
General
Package/Case
TO-220AB
Continuous Drain Current (ID)
2A
Current Rating
2A
Drain to Source Breakdown Voltage
600V
Drain to Source Resistance
4.7R
Drain to Source Voltage (Vdss)
600V
Dual Supply Voltage
600V
Element Configuration
Single
Fall Time
28ns
Gate to Source Voltage (Vgs)
30V
Height
9.4mm
Input Capacitance
235pF
Lead Free
Lead Free
Length
10.1mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
54W
Mount
Through Hole
Nominal Vgs
4V
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
54W
Radiation Hardening
No
Rds On Max
4.7R
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
QFET®
Termination
Through Hole
Threshold Voltage
4V
Turn-Off Delay Time
24ns
Turn-On Delay Time
9ns
DC Rated Voltage
600V
Weight
1.8g
Width
4.7mm
Compliance
RoHS
Compliant
Datasheet
Onsemi FQP2N60C Datasheet
Download the complete datasheet for Onsemi FQP2N60C to view detailed technical specifications.
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