ONSEMI

FQP2N80

Onsemi

FQP2N80

Name: FQP2N80 Onsemi
Brand: Onsemi
SKU: FQP2N80

800V N-CH MOSFET, 2.4A, 6.3R, TO-220AB

N-Channel MOSFET, 800V Drain-Source Breakdown Voltage, 2.4A Continuous Drain Current, 6.3 Ohm Rds On. Features 28ns Fall Time, 25ns Turn-Off Delay, and 12ns Turn-On Delay. Single element configuration with 550pF Input Capacitance and 30V Gate-Source Voltage. 85W Max Power Dissipation in a TO-220AB package for through-hole mounting. RoHS compliant and lead-free.

PackageTO-220AB

Current Rating2.4A

MountingThrough Hole

PolarityN-CHANNEL

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Technical Specifications

Onsemi FQP2N80 technical specifications.

General

Package/Case	TO-220AB
Continuous Drain Current (ID)	2.4A
Current Rating	2.4A
Drain to Source Breakdown Voltage	800V
Drain to Source Resistance	6.3R
Drain to Source Voltage (Vdss)	800V
Element Configuration	Single
Fall Time	28ns
Gate to Source Voltage (Vgs)	30V
Height	9.4mm
Input Capacitance	550pF
Lead Free	Lead Free
Length	10.1mm
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Max Power Dissipation	85W
Mount	Through Hole
Package Quantity	50
Packaging	Rail/Tube
Polarity	N-CHANNEL
Power Dissipation	85W
Radiation Hardening	No
Rds On Max	6.3R
RoHS Compliant	Yes
Series	QFET®
Turn-Off Delay Time	25ns
Turn-On Delay Time	12ns
DC Rated Voltage	800V
Weight	1.8g
Width	4.7mm