N-Channel Power MOSFET, 900V Drain-Source Breakdown Voltage, 2.2A Continuous Drain Current, and 7.2 Ohm Max Drain-Source On Resistance. This single element MOSFET features a TO-220AB through-hole package, 85W maximum power dissipation, and operates within a temperature range of -55°C to 150°C. Includes fast switching characteristics with turn-on delay of 15ns and fall time of 30ns. RoHS compliant and lead-free.
PackageTO-220AB
Current Rating2.2A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Onsemi FQP2N90 technical specifications.
General
| Package/Case | TO-220AB |
| Continuous Drain Current (ID) | 2.2A |
| Current Rating | 2.2A |
| Drain to Source Breakdown Voltage | 900V |
| Drain to Source Resistance | 7.2R |
| Drain to Source Voltage (Vdss) | 900V |
| Drain-source On Resistance-Max | 7.2MR |
| Element Configuration | Single |
| Fall Time | 30ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 9.4mm |
| Input Capacitance | 500pF |
| Lead Free | Lead Free |
| Length | 10.1mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 85W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 85W |
| Rds On Max | 7.2R |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | QFET® |
| Threshold Voltage | 5V |
| Turn-Off Delay Time | 20ns |
| Turn-On Delay Time | 15ns |
| DC Rated Voltage | 900V |
| Weight | 1.8g |
| Width | 4.7mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FQP2N90 Datasheet
Download the complete datasheet for Onsemi FQP2N90 to view detailed technical specifications.
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