N-channel Power MOSFET, Logic Level, 60V Drain-Source Breakdown Voltage, 32A Continuous Drain Current, and 35mΩ Max Drain-Source On-Resistance. Features a TO-220AB package for through-hole mounting, 79W max power dissipation, and operates from -55°C to 175°C. Includes 1.04nF input capacitance and fast switching times with 15ns turn-on delay. RoHS compliant and lead-free.
PackageTO-220AB
Current Rating32A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Onsemi FQP30N06L technical specifications.
General
Package/Case
TO-220AB
Continuous Drain Current (ID)
32A
Current Rating
32A
Drain to Source Breakdown Voltage
60V
Drain to Source Resistance
27mR
Drain to Source Voltage (Vdss)
60V
Drain-source On Resistance-Max
35mR
Element Configuration
Single
Fall Time
110ns
Gate to Source Voltage (Vgs)
20V
Height
16.3mm
Input Capacitance
1.04nF
Lead Free
Lead Free
Length
10.67mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
79W
Mount
Through Hole
Nominal Vgs
2.5V
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
79W
Radiation Hardening
No
Rds On Max
35mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
QFET®
Threshold Voltage
2.5V
Turn-Off Delay Time
60ns
Turn-On Delay Time
15ns
DC Rated Voltage
60V
Weight
1.8g
Width
4.7mm
Compliance
RoHS
Compliant
Datasheet
Onsemi FQP30N06L Datasheet
Download the complete datasheet for Onsemi FQP30N06L to view detailed technical specifications.
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