N-Channel Power MOSFET, QFET® series, featuring a 300V drain-to-source breakdown voltage and 3.2A continuous drain current. This single-element transistor offers a low 2.2Ω drain-to-source resistance (Rds On Max) and a maximum power dissipation of 55W. Designed for through-hole mounting in a TO-220 package, it operates within a temperature range of -55°C to 150°C and includes fast switching characteristics with turn-on and turn-off delay times of 10ns. RoHS compliant and lead-free.
PackageTO-220
Current Rating3.2A
MountingThrough Hole
PolarityN-CHANNEL
Quick Jump:
Technical Specifications
Onsemi FQP3N30 technical specifications.
General
| Package/Case | TO-220 |
| Continuous Drain Current (ID) | 3.2A |
| Current Rating | 3.2A |
| Drain to Source Breakdown Voltage | 300V |
| Drain to Source Resistance | 2.2R |
| Drain to Source Voltage (Vdss) | 300V |
| Element Configuration | Single |
| Fall Time | 25ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 16.3mm |
| Input Capacitance | 230pF |
| Lead Free | Lead Free |
| Length | 10.67mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 55W |
| Mount | Through Hole |
| Number of Channels | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 55W |
| Radiation Hardening | No |
| Rds On Max | 2.2R |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | QFET® |
| Threshold Voltage | 1.65V |
| Turn-Off Delay Time | 10ns |
| Turn-On Delay Time | 10ns |
| DC Rated Voltage | 300V |
| Weight | 1.8g |
| Width | 4.7mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FQP3N30 Datasheet
Download the complete datasheet for Onsemi FQP3N30 to view detailed technical specifications.
No datasheet is available for this part.
Product Images
