P-channel Power MOSFET featuring a -60V drain-source breakdown voltage and a continuous drain current of 47A. This TO-220AB packaged MOSFET offers a low drain-source on-resistance of 26mΩ at a nominal Vgs of -4V. Designed for through-hole mounting, it boasts a maximum power dissipation of 160W and operates across a wide temperature range of -55°C to 175°C. Key switching characteristics include a turn-on delay time of 50ns and a fall time of 195ns.
PackageTO-220AB
Current Rating-47A
MountingThrough Hole
PolarityP-CHANNEL
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Technical Specifications
Onsemi FQP47P06 technical specifications.
General
Package/Case
TO-220AB
Continuous Drain Current (ID)
47A
Current Rating
-47A
Drain to Source Breakdown Voltage
-60V
Drain to Source Resistance
26mR
Drain to Source Voltage (Vdss)
60V
Drain-source On Resistance-Max
26mR
Element Configuration
Single
Fall Time
195ns
Gate to Source Voltage (Vgs)
25V
Height
9.4mm
Input Capacitance
3.6nF
Lead Free
Lead Free
Length
10.1mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
160W
Mount
Through Hole
Nominal Vgs
-4V
Number of Elements
1
Package Quantity
50
Packaging
Rail/Tube
Polarity
P-CHANNEL
Power Dissipation
160W
Radiation Hardening
No
Rds On Max
26mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
QFET®
Threshold Voltage
-4V
Turn-Off Delay Time
100ns
Turn-On Delay Time
50ns
DC Rated Voltage
-60V
Weight
1.8g
Width
4.7mm
Compliance
RoHS
Compliant
Datasheet
Onsemi FQP47P06 Datasheet
Download the complete datasheet for Onsemi FQP47P06 to view detailed technical specifications.
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