P-channel Power MOSFET featuring a -60V drain-source breakdown voltage and a continuous drain current of 47A. This TO-220AB packaged MOSFET offers a low drain-source on-resistance of 26mΩ at a nominal Vgs of -4V. Designed for through-hole mounting, it boasts a maximum power dissipation of 160W and operates across a wide temperature range of -55°C to 175°C. Key switching characteristics include a turn-on delay time of 50ns and a fall time of 195ns.
PackageTO-220AB
Current Rating-47A
MountingThrough Hole
PolarityP-CHANNEL
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Technical Specifications
Onsemi FQP47P06 technical specifications.
General
| Package/Case | TO-220AB |
| Continuous Drain Current (ID) | 47A |
| Current Rating | -47A |
| Drain to Source Breakdown Voltage | -60V |
| Drain to Source Resistance | 26mR |
| Drain to Source Voltage (Vdss) | 60V |
| Drain-source On Resistance-Max | 26mR |
| Element Configuration | Single |
| Fall Time | 195ns |
| Gate to Source Voltage (Vgs) | 25V |
| Height | 9.4mm |
| Input Capacitance | 3.6nF |
| Lead Free | Lead Free |
| Length | 10.1mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 160W |
| Mount | Through Hole |
| Nominal Vgs | -4V |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | P-CHANNEL |
| Power Dissipation | 160W |
| Radiation Hardening | No |
| Rds On Max | 26mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | QFET® |
| Threshold Voltage | -4V |
| Turn-Off Delay Time | 100ns |
| Turn-On Delay Time | 50ns |
| DC Rated Voltage | -60V |
| Weight | 1.8g |
| Width | 4.7mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FQP47P06 Datasheet
Download the complete datasheet for Onsemi FQP47P06 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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