N-Channel Power MOSFET, QFET® series, featuring 800V drain-source breakdown voltage and 3.9A continuous drain current. This through-hole component offers a low 3.6Ω drain-to-source resistance (Rds On Max) and a maximum power dissipation of 130W. Designed for efficient switching, it exhibits a turn-on delay time of 16ns and a fall time of 35ns. Packaged in a TO-220AB case, this RoHS compliant semiconductor operates from -55°C to 150°C.
PackageTO-220AB
Current Rating3.9A
MountingThrough Hole
PolarityN-CHANNEL
Quick Jump:
Technical Specifications
Onsemi FQP4N80 technical specifications.
General
| Package/Case | TO-220AB |
| Continuous Drain Current (ID) | 3.9A |
| Current Rating | 3.9A |
| Drain to Source Breakdown Voltage | 800V |
| Drain to Source Resistance | 3.6R |
| Drain to Source Voltage (Vdss) | 800V |
| Element Configuration | Single |
| Fall Time | 35ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 9.4mm |
| Input Capacitance | 880pF |
| Lead Free | Lead Free |
| Length | 10.1mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 130W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 130W |
| Rds On Max | 3.6R |
| RoHS Compliant | Yes |
| Series | QFET® |
| Turn-Off Delay Time | 35ns |
| Turn-On Delay Time | 16ns |
| DC Rated Voltage | 800V |
| Weight | 1.8g |
| Width | 4.7mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FQP4N80 Datasheet
Download the complete datasheet for Onsemi FQP4N80 to view detailed technical specifications.
No datasheet is available for this part.
Product Images
