
N-Channel Power MOSFET featuring 60V drain-source breakdown voltage and 50A continuous drain current. This TO-220AB packaged component offers a low 22mΩ drain-source on-resistance. Key electrical characteristics include a 4V threshold voltage and 1.54nF input capacitance. Designed for through-hole mounting, it operates within a -55°C to 175°C temperature range and supports 120W maximum power dissipation.
Onsemi FQP50N06 technical specifications.
| Package/Case | TO-220AB |
| Continuous Drain Current (ID) | 50A |
| Current Rating | 50A |
| Drain to Source Breakdown Voltage | 60V |
| Drain to Source Resistance | 22mR |
| Drain to Source Voltage (Vdss) | 60V |
| Drain-source On Resistance-Max | 22mR |
| Fall Time | 65ns |
| Gate to Source Voltage (Vgs) | 25V |
| Height | 9.4mm |
| Input Capacitance | 1.54nF |
| Lead Free | Lead Free |
| Length | 10.1mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 120W |
| Mount | Through Hole |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 120W |
| Rds On Max | 22mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | PowerTrench®, SyncFET™ |
| Threshold Voltage | 4V |
| Turn-Off Delay Time | 60ns |
| Turn-On Delay Time | 15ns |
| DC Rated Voltage | 60V |
| Weight | 1.8g |
| Width | 4.7mm |
| RoHS | Compliant |
Download the complete datasheet for Onsemi FQP50N06 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
