N-channel Power MOSFET, QFET® series, featuring a 60V drain-source breakdown voltage and a continuous drain current of 52.4A. This logic-level MOSFET offers a low 21mΩ drain-source on-resistance and a maximum power dissipation of 121W. Packaged in a TO-220 through-hole mount, it operates from -55°C to 175°C and is RoHS compliant. Key switching characteristics include a 20ns turn-on delay and 145ns fall time.
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| Package/Case | TO-220 |
| Continuous Drain Current (ID) | 52.4A |
| Current Rating | 52.4A |
| Drain to Source Breakdown Voltage | 60V |
| Drain to Source Resistance | 21mR |
| Drain to Source Voltage (Vdss) | 60V |
| Drain-source On Resistance-Max | 21MR |
| Element Configuration | Single |
| Fall Time | 145ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 9.4mm |
| Input Capacitance | 1.63nF |
| Lead Free | Lead Free |
| Length | 10.1mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 121W |
| Mount | Through Hole |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 121W |
| Radiation Hardening | No |
| Rds On Max | 21mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | QFET® |
| Threshold Voltage | 2.5V |
| Turn-Off Delay Time | 80ns |
| Turn-On Delay Time | 20ns |
| DC Rated Voltage | 60V |
| Weight | 1.8g |
| Width | 4.7mm |
| RoHS | Compliant |
These are design resources that include the Onsemi FQP50N06L
onsemi product discontinuance notice PD24792XB for various MOSFETs and discrete parts. Includes last time buy (Dec 30, 2022) and ship dates (Jun 30, 2023) plus replacements.
