FQP5N50C

Datasheet

Onsemi

FQP5N50C

Name: FQP5N50C Onsemi
Brand: Onsemi
SKU: FQP5N50C

500V 5A N-Channel MOSFET TO-220AB 1.4R

N-channel power MOSFET with 500V drain-source breakdown voltage and 5A continuous drain current. Features low on-resistance of 1.4 Ohms at a nominal gate-source voltage of 4V. This through-hole component, housed in a TO-220AB package, offers a maximum power dissipation of 73W and operates within a temperature range of -55°C to 150°C. Fast switching speeds are indicated by turn-on delay time of 12ns and fall time of 48ns.

PackageTO-220AB

Resistance1.4R

Current Rating5A

MountingThrough Hole

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Technical Specifications

Onsemi FQP5N50C technical specifications.

General

Package/Case	TO-220AB
Continuous Drain Current (ID)	5A
Current Rating	5A
Drain to Source Breakdown Voltage	500V
Drain to Source Resistance	1.4R
Drain to Source Voltage (Vdss)	500V
Dual Supply Voltage	500V
Fall Time	48ns
Gate to Source Voltage (Vgs)	30V
Height	9.4mm
Input Capacitance	625pF
Lead Free	Lead Free
Length	10.1mm
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Max Power Dissipation	73W
Mount	Through Hole
Nominal Vgs	4V
Package Quantity	50
Packaging	Rail/Tube
Polarity	N-CHANNEL
Power Dissipation	73W
Rds On Max	1.4R
Reach SVHC Compliant	No
Resistance	1.4R
Series	QFET®
Termination	Through Hole
Turn-Off Delay Time	50ns
Turn-On Delay Time	12ns
DC Rated Voltage	500V
Weight	1.8g
Width	4.7mm