N-channel Power MOSFET featuring 900V drain-source breakdown voltage and 6A continuous drain current. This QFET® series component offers a maximum drain-source on-resistance of 2.3Ω at a nominal gate-source voltage of 5V. Designed for through-hole mounting in a TO-220AB package, it boasts a maximum power dissipation of 167W and operates within a temperature range of -55°C to 150°C. Key switching characteristics include a turn-on delay of 35ns and a fall time of 60ns.
PackageTO-220AB
Current Rating6A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Onsemi FQP6N90C technical specifications.
General
Package/Case
TO-220AB
Continuous Drain Current (ID)
6A
Current Rating
6A
Drain to Source Breakdown Voltage
900V
Drain to Source Resistance
2.3R
Drain to Source Voltage (Vdss)
900V
Drain-source On Resistance-Max
2.3R
Dual Supply Voltage
900V
Element Configuration
Single
Fall Time
60ns
Gate to Source Voltage (Vgs)
30V
Height
9.4mm
Input Capacitance
1.77nF
Lead Free
Lead Free
Length
10.1mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
167W
Mount
Through Hole
Nominal Vgs
5V
Number of Elements
1
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
167W
Radiation Hardening
No
Rds On Max
2.3R
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
QFET®
Termination
Through Hole
Threshold Voltage
5V
Turn-Off Delay Time
55ns
Turn-On Delay Time
35ns
DC Rated Voltage
900V
Weight
1.8g
Width
4.7mm
Compliance
RoHS
Compliant
Datasheet
Onsemi FQP6N90C Datasheet
Download the complete datasheet for Onsemi FQP6N90C to view detailed technical specifications.
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