N-channel Power MOSFET featuring 800V drain-source breakdown voltage and 8A continuous drain current. This single-element transistor boasts a low 1.55Ω Rds On, 178W power dissipation, and TO-220AB through-hole package. Optimized for switching applications with turn-on delay of 40ns and fall time of 70ns. Operates within a temperature range of -55°C to 150°C.
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| Package/Case | TO-220AB |
| Continuous Drain Current (ID) | 8A |
| Current Rating | 8A |
| Drain to Source Breakdown Voltage | 800V |
| Drain to Source Resistance | 1.55R |
| Drain to Source Voltage (Vdss) | 800V |
| Element Configuration | Single |
| Fall Time | 70ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 9.4mm |
| Input Capacitance | 2.05nF |
| Lead Free | Lead Free |
| Length | 10.1mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 178W |
| Mount | Through Hole |
| Number of Channels | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 178W |
| Rds On Max | 1.55R |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | QFET™ |
| Threshold Voltage | 5V |
| Turn-Off Delay Time | 65ns |
| Turn-On Delay Time | 40ns |
| DC Rated Voltage | 800V |
| Weight | 1.8g |
| Width | 4.7mm |
| RoHS | Compliant |
These are design resources that include the Onsemi FQP8N80C
onsemi product discontinuance notice for 4Q2021 (Batch 4). Defines Last Time Buy (June 21, 2022) and Last Ship (Dec 21, 2022) dates for various semiconductor components.
