N-channel MOSFET with 100V drain-source breakdown voltage and 90A continuous drain current. Features low 10mΩ Rds(on) and 250W power dissipation. Operates from -55°C to 175°C, with a 30V maximum gate-source voltage. Packaged in a TO-220AB through-hole mount, this RoHS compliant component offers fast switching times with a 52ns turn-on delay.
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Onsemi FQP90N10V2 technical specifications.
| Package/Case | TO-220AB |
| Continuous Drain Current (ID) | 90A |
| Current Rating | 90A |
| Drain to Source Breakdown Voltage | 100V |
| Drain to Source Resistance | 10mR |
| Drain to Source Voltage (Vdss) | 100V |
| Dual Supply Voltage | 100V |
| Fall Time | 355ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 9.4mm |
| Input Capacitance | 6.15nF |
| Lead Free | Lead Free |
| Length | 10.1mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 250W |
| Mount | Through Hole |
| Nominal Vgs | 4V |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 250W |
| Rds On Max | 10mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | QFET® |
| Termination | Through Hole |
| Turn-Off Delay Time | 304ns |
| Turn-On Delay Time | 52ns |
| DC Rated Voltage | 100V |
| Width | 4.7mm |
| RoHS | Compliant |
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