P-Channel MOSFET featuring a -250V drain-source breakdown voltage and a continuous drain current of 9.4A. This single-element transistor offers a maximum drain-source on-resistance of 620mΩ. Designed for through-hole mounting in a TO-220AB package, it operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 120W. Key electrical characteristics include a 1.18nF input capacitance and fall/turn-off delay times of 65ns and 45ns respectively.
PackageTO-220AB
Current Rating-9.4A
MountingThrough Hole
PolarityP-CHANNEL
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Technical Specifications
Onsemi FQP9P25 technical specifications.
General
| Package/Case | TO-220AB |
| Continuous Drain Current (ID) | 9.4A |
| Current Rating | -9.4A |
| Drain to Source Breakdown Voltage | -250V |
| Drain to Source Resistance | 620mR |
| Drain to Source Voltage (Vdss) | 250V |
| Drain-source On Resistance-Max | 620mR |
| Element Configuration | Single |
| Fall Time | 65ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 16.3mm |
| Input Capacitance | 1.18nF |
| Lead Free | Lead Free |
| Length | 10.67mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 120W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | P-CHANNEL |
| Power Dissipation | 120W |
| Radiation Hardening | No |
| Rds On Max | 620mR |
| RoHS Compliant | Yes |
| Series | QFET® |
| Turn-Off Delay Time | 45ns |
| Turn-On Delay Time | 20ns |
| DC Rated Voltage | -250V |
| Weight | 1.8g |
| Width | 4.7mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FQP9P25 Datasheet
Download the complete datasheet for Onsemi FQP9P25 to view detailed technical specifications.
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