P-Channel MOSFET featuring a -250V drain-source breakdown voltage and a continuous drain current of 9.4A. This single-element transistor offers a maximum drain-source on-resistance of 620mΩ. Designed for through-hole mounting in a TO-220AB package, it operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 120W. Key electrical characteristics include a 1.18nF input capacitance and fall/turn-off delay times of 65ns and 45ns respectively.
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| Package/Case | TO-220AB |
| Continuous Drain Current (ID) | 9.4A |
| Current Rating | -9.4A |
| Drain to Source Breakdown Voltage | -250V |
| Drain to Source Resistance | 620mR |
| Drain to Source Voltage (Vdss) | 250V |
| Drain-source On Resistance-Max | 620mR |
| Element Configuration | Single |
| Fall Time | 65ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 16.3mm |
| Input Capacitance | 1.18nF |
| Lead Free | Lead Free |
| Length | 10.67mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 120W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | P-CHANNEL |
| Power Dissipation | 120W |
| Radiation Hardening | No |
| Rds On Max | 620mR |
| RoHS Compliant | Yes |
| Series | QFET® |
| Turn-Off Delay Time | 45ns |
| Turn-On Delay Time | 20ns |
| DC Rated Voltage | -250V |
| Weight | 1.8g |
| Width | 4.7mm |
| RoHS | Compliant |
These are design resources that include the Onsemi FQP9P25
onsemi product discontinuance notice PD24792XB for various MOSFETs and discrete parts. Includes last time buy (Dec 30, 2022) and ship dates (Jun 30, 2023) plus replacements.
