FQPF10N20C

N-Channel Power MOSFET, QFET® series, featuring 200V drain-to-source breakdown voltage and 9.5A continuous drain current. This single-element transistor offers a low 360mΩ drain-to-source resistance (Rds On Max) and a 4V threshold voltage. Designed for through-hole mounting in a TO-220-3 package, it operates within a -55°C to 150°C temperature range with a maximum power dissipation of 38W. Key switching characteristics include an 11ns turn-on delay and 72ns fall time.