
N-Channel Power MOSFET, Logic Level, QFET® series, featuring a 60V drain-source breakdown voltage and 10A continuous drain current. Offers a maximum drain-source on-resistance of 110mΩ at 10Vgs, with a typical 88mΩ. Operates with a 2.5V threshold voltage and a 20V maximum gate-source voltage. Packaged in a TO-220F for through-hole mounting, with a maximum power dissipation of 24W and an operating temperature range of -55°C to 175°C.
Onsemi FQPF13N06L technical specifications.
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 10A |
| Current Rating | 13.6A |
| Drain to Source Breakdown Voltage | 60V |
| Drain to Source Resistance | 88mR |
| Drain to Source Voltage (Vdss) | 60V |
| Drain-source On Resistance-Max | 110MR |
| Element Configuration | Single |
| Fall Time | 40ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 9.19mm |
| Input Capacitance | 350pF |
| Lead Free | Lead Free |
| Length | 10.16mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 24W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 24W |
| Rds On Max | 110mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | QFET® |
| Threshold Voltage | 2.5V |
| Turn-Off Delay Time | 20ns |
| Turn-On Delay Time | 8ns |
| DC Rated Voltage | 60V |
| Weight | 2.27g |
| Width | 4.7mm |
| RoHS | Compliant |
Download the complete datasheet for Onsemi FQPF13N06L to view detailed technical specifications.
No datasheet is available for this part.
