N-channel MOSFET featuring 500V drain-source breakdown voltage and 13A continuous drain current. This through-hole component offers a low Rds(on) of 480mΩ and a maximum power dissipation of 48W. Operating across a wide temperature range from -55°C to 150°C, it includes fast switching characteristics with turn-on delay time of 25ns and fall time of 100ns. Packaged in TO-220-3, this lead-free device is ideal for high-voltage applications.
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| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 13A |
| Current Rating | 13A |
| Drain to Source Breakdown Voltage | 500V |
| Drain to Source Resistance | 480mR |
| Drain to Source Voltage (Vdss) | 500V |
| Fall Time | 100ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 19.5mm |
| Input Capacitance | 2.055nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 48W |
| Mount | Through Hole |
| Number of Channels | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 48W |
| Rds On Max | 480mR |
| Series | QFET® |
| Turn-Off Delay Time | 130ns |
| Turn-On Delay Time | 25ns |
| DC Rated Voltage | 500V |
| RoHS | Not Compliant |
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