The FQPF13N50T is a high-power N-channel MOSFET with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It features a drain to source breakdown voltage of 500V and a continuous drain current of 12.5A. The device has a maximum power dissipation of 56W and is packaged in a TO-220-3 case with a lead-free finish. It is RoHS compliant and suitable for use in high-power applications.
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Onsemi FQPF13N50T technical specifications.
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 12.5A |
| Current Rating | 12.5A |
| Drain to Source Breakdown Voltage | 500V |
| Drain to Source Resistance | 430mR |
| Drain to Source Voltage (Vdss) | 500V |
| Fall Time | 85ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 2.3nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 56W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 56W |
| Rds On Max | 430mR |
| RoHS Compliant | Yes |
| Series | QFET® |
| Turn-Off Delay Time | 100ns |
| DC Rated Voltage | 500V |
| RoHS | Compliant |
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