N-channel MOSFET with 200V drain-source breakdown voltage and 18A continuous drain current. Features 140mΩ maximum drain-source on-resistance and 40W maximum power dissipation. Operates within a temperature range of -55°C to 150°C. Through-hole mounting in a TO-220-3 package. Includes fast switching characteristics with turn-on delay of 16ns and fall time of 62ns.
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| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 18A |
| Current Rating | 18A |
| Drain to Source Breakdown Voltage | 200V |
| Drain to Source Resistance | 140mR |
| Drain to Source Voltage (Vdss) | 200V |
| Fall Time | 62ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 1.08nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 40W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 40W |
| Radiation Hardening | No |
| Rds On Max | 140mR |
| RoHS Compliant | Yes |
| Series | QFET® |
| Turn-Off Delay Time | 38ns |
| Turn-On Delay Time | 16ns |
| DC Rated Voltage | 200V |
| RoHS | Compliant |
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