The FQPF18N50V2 is a high-power N-channel MOSFET from Onsemi, featuring a 500V drain-to-source breakdown voltage and 18A continuous drain current. It is packaged in a TO-220-3 case and is suitable for through-hole mounting. The device operates over a temperature range of -55°C to 150°C and is compliant with RoHS regulations. With a maximum power dissipation of 69W, this MOSFET is designed for high-current applications.
PackageTO-220-3
Current Rating18A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Onsemi FQPF18N50V2 technical specifications.
General
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 18A |
| Current Rating | 18A |
| Drain to Source Breakdown Voltage | 500V |
| Drain to Source Resistance | 225mR |
| Drain to Source Voltage (Vdss) | 500V |
| Fall Time | 110ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 3.29nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 69W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 69W |
| Rds On Max | 265mR |
| RoHS Compliant | Yes |
| Series | QFET® |
| Turn-Off Delay Time | 95ns |
| DC Rated Voltage | 500V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FQPF18N50V2 Datasheet
Download the complete datasheet for Onsemi FQPF18N50V2 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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