N-channel Power MOSFET featuring 60V drain-source breakdown voltage and 15A continuous drain current. This single-element transistor offers a low 60mΩ drain-source on-resistance. Designed for through-hole mounting in a TO-220-3 package, it operates across a wide temperature range from -55°C to 175°C with a maximum power dissipation of 30W. Key switching characteristics include a 5ns turn-on delay and 25ns fall time.
Checking distributor stock and pricing after the page loads.
Sign in to ask questions about the Onsemi FQPF20N06 datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Onsemi FQPF20N06 technical specifications.
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 15A |
| Current Rating | 15A |
| Drain to Source Breakdown Voltage | 60V |
| Drain to Source Resistance | 60mR |
| Drain to Source Voltage (Vdss) | 60V |
| Element Configuration | Single |
| Fall Time | 25ns |
| Gate to Source Voltage (Vgs) | 25V |
| Height | 16.07mm |
| Input Capacitance | 590pF |
| Lead Free | Lead Free |
| Length | 10.36mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 30W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 30W |
| Radiation Hardening | No |
| Rds On Max | 60mR |
| RoHS Compliant | Yes |
| Series | QFET® |
| Turn-Off Delay Time | 20ns |
| Turn-On Delay Time | 5ns |
| DC Rated Voltage | 60V |
| Weight | 2.27g |
| Width | 4.9mm |
| RoHS | Compliant |
Download the complete datasheet for Onsemi FQPF20N06 to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
