
N-Channel MOSFET, 300V Drain to Source Breakdown Voltage, 12A Continuous Drain Current, 160mΩ Drain to Source Resistance. Features a TO-220-3 through-hole package, 56W maximum power dissipation, and operates from -55°C to 150°C. Includes 35ns turn-on delay and 85ns turn-off delay. RoHS compliant and lead-free.
Onsemi FQPF22N30 technical specifications.
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 12A |
| Current Rating | 12A |
| Drain to Source Breakdown Voltage | 300V |
| Drain to Source Resistance | 160mR |
| Drain to Source Voltage (Vdss) | 300V |
| Element Configuration | Single |
| Fall Time | 100ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 2.2nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 56W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 56W |
| Radiation Hardening | No |
| Rds On Max | 160mR |
| RoHS Compliant | Yes |
| Series | QFET® |
| Turn-Off Delay Time | 85ns |
| Turn-On Delay Time | 35ns |
| DC Rated Voltage | 300V |
| Weight | 2.27g |
| RoHS | Compliant |
Download the complete datasheet for Onsemi FQPF22N30 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
