P-channel Power MOSFET featuring a -60V drain-source breakdown voltage and a continuous drain current of 17A. This single-element transistor offers a low drain-source on-resistance of 70mΩ, ideal for efficient power switching. Packaged in a TO-220F configuration for through-hole mounting, it operates across a wide temperature range from -55°C to 175°C with a maximum power dissipation of 47W. Key electrical characteristics include a threshold voltage of -2V and input capacitance of 1.4nF, with fast switching times including an 18ns turn-on delay.
PackageTO-220-3
Current Rating-17A
MountingThrough Hole
PolarityP-CHANNEL
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Technical Specifications
Onsemi FQPF27P06 technical specifications.
General
Package/Case
TO-220-3
Continuous Drain Current (ID)
17A
Current Rating
-17A
Drain to Source Breakdown Voltage
-60V
Drain to Source Resistance
70mR
Drain to Source Voltage (Vdss)
60V
Drain-source On Resistance-Max
70MR
Element Configuration
Single
Fall Time
90ns
Gate to Source Voltage (Vgs)
25V
Height
16.3mm
Input Capacitance
1.4nF
Lead Free
Lead Free
Length
10.67mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
47W
Mount
Through Hole
Number of Channels
1
Number of Elements
1
Package Quantity
50
Packaging
Rail/Tube
Polarity
P-CHANNEL
Power Dissipation
47W
Radiation Hardening
No
Rds On Max
70mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
QFET®
Threshold Voltage
-2V
Turn-Off Delay Time
30ns
Turn-On Delay Time
18ns
DC Rated Voltage
-60V
Weight
2.27g
Width
4.7mm
Compliance
RoHS
Compliant
Datasheet
Onsemi FQPF27P06 Datasheet
Download the complete datasheet for Onsemi FQPF27P06 to view detailed technical specifications.
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