P-channel Power MOSFET featuring a -60V drain-source breakdown voltage and a continuous drain current of 17A. This single-element transistor offers a low drain-source on-resistance of 70mΩ, ideal for efficient power switching. Packaged in a TO-220F configuration for through-hole mounting, it operates across a wide temperature range from -55°C to 175°C with a maximum power dissipation of 47W. Key electrical characteristics include a threshold voltage of -2V and input capacitance of 1.4nF, with fast switching times including an 18ns turn-on delay.
PackageTO-220-3
Current Rating-17A
MountingThrough Hole
PolarityP-CHANNEL
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Technical Specifications
Onsemi FQPF27P06 technical specifications.
General
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 17A |
| Current Rating | -17A |
| Drain to Source Breakdown Voltage | -60V |
| Drain to Source Resistance | 70mR |
| Drain to Source Voltage (Vdss) | 60V |
| Drain-source On Resistance-Max | 70MR |
| Element Configuration | Single |
| Fall Time | 90ns |
| Gate to Source Voltage (Vgs) | 25V |
| Height | 16.3mm |
| Input Capacitance | 1.4nF |
| Lead Free | Lead Free |
| Length | 10.67mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 47W |
| Mount | Through Hole |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | P-CHANNEL |
| Power Dissipation | 47W |
| Radiation Hardening | No |
| Rds On Max | 70mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | QFET® |
| Threshold Voltage | -2V |
| Turn-Off Delay Time | 30ns |
| Turn-On Delay Time | 18ns |
| DC Rated Voltage | -60V |
| Weight | 2.27g |
| Width | 4.7mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FQPF27P06 Datasheet
Download the complete datasheet for Onsemi FQPF27P06 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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