N-Channel Power MOSFET featuring 600V drain-source breakdown voltage and 2A continuous drain current. This QFET® series component offers a low 4.7Ω drain-source on-resistance and 23W maximum power dissipation. Designed for through-hole mounting in a TO-220-3 package, it boasts fast switching speeds with turn-on delay of 9ns and fall time of 28ns. RoHS compliant and lead-free, it operates within a temperature range of -55°C to 150°C.
PackageTO-220-3
Current Rating2A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Onsemi FQPF2N60C technical specifications.
General
Package/Case
TO-220-3
Continuous Drain Current (ID)
2A
Current Rating
2A
Drain to Source Breakdown Voltage
600V
Drain to Source Resistance
4.7R
Drain to Source Voltage (Vdss)
600V
Drain-source On Resistance-Max
4.7R
Element Configuration
Single
Fall Time
28ns
Gate to Source Voltage (Vgs)
30V
Height
9.19mm
Input Capacitance
235pF
Lead Free
Lead Free
Length
10.16mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
23W
Mount
Through Hole
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
23W
Radiation Hardening
No
Rds On Max
4.7R
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
QFET®
Threshold Voltage
4V
Turn-Off Delay Time
24ns
Turn-On Delay Time
9ns
DC Rated Voltage
600V
Weight
2.27g
Width
4.7mm
Compliance
RoHS
Compliant
Datasheet
Onsemi FQPF2N60C Datasheet
Download the complete datasheet for Onsemi FQPF2N60C to view detailed technical specifications.
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