P-channel Power MOSFET featuring QFET® technology. Offers a continuous drain current of 30A and a drain-to-source breakdown voltage of -60V. Low on-resistance of 26mΩ at a Vgs of 10V. Designed for through-hole mounting in a TO-220-3 package, with a maximum power dissipation of 62W and an operating temperature range of -55°C to 175°C. Lead-free and RoHS compliant.
PackageTO-220-3
MountingThrough Hole
PolarityP-CHANNEL
Power62W
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Technical Specifications
Onsemi FQPF47P06YDTU technical specifications.
General
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 30A |
| Drain to Source Breakdown Voltage | -60V |
| Drain to Source Resistance | 26mR |
| Drain to Source Voltage (Vdss) | 60V |
| Element Configuration | Single |
| Fall Time | 195ns |
| Gate to Source Voltage (Vgs) | 25V |
| Input Capacitance | 3.6nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 62W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | P-CHANNEL |
| Power Dissipation | 62W |
| Radiation Hardening | No |
| Rds On Max | 26mR |
| RoHS Compliant | Yes |
| Series | QFET® |
| Turn-Off Delay Time | 100ns |
| Turn-On Delay Time | 50ns |
| Weight | 2.565g |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FQPF47P06YDTU Datasheet
Download the complete datasheet for Onsemi FQPF47P06YDTU to view detailed technical specifications.
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