N-channel MOSFET featuring 600V drain-source breakdown voltage and 2.6A continuous drain current. This through-hole component offers a low 2.2Ω Rds On (max) and 36W power dissipation. Designed for efficient switching, it exhibits turn-on delay of 13ns and fall time of 35ns. Housed in a TO-220-3 package, this RoHS compliant device operates from -55°C to 150°C.
PackageTO-220-3
Current Rating2.6A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Onsemi FQPF4N60 technical specifications.
General
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 2.6A |
| Current Rating | 2.6A |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 2.2R |
| Drain to Source Voltage (Vdss) | 600V |
| Fall Time | 35ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 670pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 36W |
| Mount | Through Hole |
| Number of Channels | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 36W |
| Rds On Max | 2.2R |
| RoHS Compliant | Yes |
| Series | QFET® |
| Turn-Off Delay Time | 25ns |
| Turn-On Delay Time | 13ns |
| DC Rated Voltage | 600V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FQPF4N60 Datasheet
Download the complete datasheet for Onsemi FQPF4N60 to view detailed technical specifications.
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