The FQPF4N90 is an N-channel MOSFET with a drain to source breakdown voltage of 900V and a continuous drain current of 2.5A. It features a TO-220-3 package with a through hole mount and is lead free. The device has a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It is RoHS compliant and has a maximum power dissipation of 47W.
PackageTO-220-3
Current Rating2.5A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Onsemi FQPF4N90 technical specifications.
General
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 2.5A |
| Current Rating | 2.5A |
| Drain to Source Breakdown Voltage | 900V |
| Drain to Source Resistance | 3.1R |
| Drain to Source Voltage (Vdss) | 900V |
| Fall Time | 40ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 1.1nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 47W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 47W |
| Rds On Max | 3.3R |
| RoHS Compliant | Yes |
| Series | QFET® |
| Turn-Off Delay Time | 45ns |
| DC Rated Voltage | 900V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FQPF4N90 Datasheet
Download the complete datasheet for Onsemi FQPF4N90 to view detailed technical specifications.
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