
N-Channel Power MOSFET, 400V Drain to Source Breakdown Voltage, 3A Continuous Drain Current, 1.6 Ohm Rds On Max. Features a TO-220-3 through-hole package, 35W power dissipation, and 460pF input capacitance. Operates from -55°C to 150°C with fast switching times including 12ns turn-on delay and 20ns turn-off delay. Lead-free and RoHS compliant.
Onsemi FQPF5N40 technical specifications.
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 3A |
| Current Rating | 3A |
| Drain to Source Breakdown Voltage | 400V |
| Drain to Source Resistance | 1.6R |
| Drain to Source Voltage (Vdss) | 400V |
| Element Configuration | Single |
| Fall Time | 30ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 460pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 35W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 35W |
| Radiation Hardening | No |
| Rds On Max | 1.6R |
| RoHS Compliant | Yes |
| Series | QFET® |
| Turn-Off Delay Time | 20ns |
| Turn-On Delay Time | 12ns |
| DC Rated Voltage | 400V |
| Weight | 2.27g |
| RoHS | Compliant |
Download the complete datasheet for Onsemi FQPF5N40 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
