N-channel Power MOSFET, 600V Drain-Source Breakdown Voltage, 4.5A Continuous Drain Current, 2.5 Ohm Rds On. Features include 10ns turn-on delay, 38ns turn-off delay, and 46ns fall time. This through-hole component offers 33W power dissipation and operates from -55°C to 150°C. Packaged in a TO-220-3 case, it is RoHS compliant.
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Onsemi FQPF5N60C technical specifications.
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 4.5A |
| Current Rating | 4.5A |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 2.5R |
| Drain to Source Voltage (Vdss) | 600V |
| Fall Time | 46ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 9.19mm |
| Input Capacitance | 670pF |
| Lead Free | Lead Free |
| Length | 10.16mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 33W |
| Mount | Through Hole |
| Number of Channels | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 33W |
| Radiation Hardening | No |
| Rds On Max | 2.5R |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | QFET® |
| Threshold Voltage | 4V |
| Turn-Off Delay Time | 38ns |
| Turn-On Delay Time | 10ns |
| DC Rated Voltage | 600V |
| Weight | 2.27g |
| Width | 4.7mm |
| RoHS | Compliant |
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