N-channel Power MOSFET featuring 650V drain-source breakdown voltage and 7A continuous drain current. This single-element transistor offers a low 1.4 Ohm drain-source on-resistance. Designed for through-hole mounting in a TO-220-3 package, it operates within a -55°C to 150°C temperature range and has a maximum power dissipation of 52W. Key switching characteristics include a 20ns turn-on delay and 55ns fall time.
PackageTO-220-3
Current Rating7A
MountingThrough Hole
PolarityN-CHANNEL
Quick Jump:
Technical Specifications
Onsemi FQPF7N65C technical specifications.
General
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 7A |
| Current Rating | 7A |
| Drain to Source Breakdown Voltage | 650V |
| Drain to Source Resistance | 1.4R |
| Drain to Source Voltage (Vdss) | 650V |
| Drain-source On Resistance-Max | 1.4R |
| Element Configuration | Single |
| Fall Time | 55ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 9.19mm |
| Input Capacitance | 1.245nF |
| Lead Free | Lead Free |
| Length | 10.16mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 52W |
| Mount | Through Hole |
| Number of Channels | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 52W |
| Rds On Max | 1.4R |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | QFET™ |
| Threshold Voltage | 4V |
| Turn-Off Delay Time | 90ns |
| Turn-On Delay Time | 20ns |
| DC Rated Voltage | 650V |
| Weight | 2.27g |
| Width | 4.7mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FQPF7N65C Datasheet
Download the complete datasheet for Onsemi FQPF7N65C to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
