N-channel Power MOSFET featuring 650V drain-source breakdown voltage and 7A continuous drain current. This single-element transistor offers a low 1.4 Ohm drain-source on-resistance. Designed for through-hole mounting in a TO-220-3 package, it operates within a -55°C to 150°C temperature range and has a maximum power dissipation of 52W. Key switching characteristics include a 20ns turn-on delay and 55ns fall time.
PackageTO-220-3
Current Rating7A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Onsemi FQPF7N65C technical specifications.
General
Package/Case
TO-220-3
Continuous Drain Current (ID)
7A
Current Rating
7A
Drain to Source Breakdown Voltage
650V
Drain to Source Resistance
1.4R
Drain to Source Voltage (Vdss)
650V
Drain-source On Resistance-Max
1.4R
Element Configuration
Single
Fall Time
55ns
Gate to Source Voltage (Vgs)
30V
Height
9.19mm
Input Capacitance
1.245nF
Lead Free
Lead Free
Length
10.16mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
52W
Mount
Through Hole
Number of Channels
1
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
52W
Rds On Max
1.4R
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
QFET™
Threshold Voltage
4V
Turn-Off Delay Time
90ns
Turn-On Delay Time
20ns
DC Rated Voltage
650V
Weight
2.27g
Width
4.7mm
Compliance
RoHS
Compliant
Datasheet
Onsemi FQPF7N65C Datasheet
Download the complete datasheet for Onsemi FQPF7N65C to view detailed technical specifications.
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