N-Channel Power MOSFET, designed for high-voltage applications, features a 600V drain-to-source breakdown voltage and a continuous drain current of 6.26A. This through-hole component offers a low on-resistance of 1.5Ω, ideal for efficient power switching. Operating across a wide temperature range from -55°C to 150°C, it boasts a maximum power dissipation of 48W. The TO-220F package ensures reliable mounting, with fast switching characteristics including turn-on delay time of 16.5ns and fall time of 64.5ns.
PackageTO-220-3
MountingThrough Hole
PolarityN-CHANNEL
Power48W
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Technical Specifications
Onsemi FQPF8N60CFT technical specifications.
General
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 6.26A |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 1.5R |
| Drain to Source Voltage (Vdss) | 600V |
| Element Configuration | Single |
| Fall Time | 64.5ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 1.255nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 48W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 48W |
| Radiation Hardening | No |
| Rds On Max | 1.5R |
| RoHS Compliant | Yes |
| Series | FRFET™ |
| Turn-Off Delay Time | 81ns |
| Turn-On Delay Time | 16.5ns |
| Weight | 2.27g |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FQPF8N60CFT Datasheet
Download the complete datasheet for Onsemi FQPF8N60CFT to view detailed technical specifications.
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