N-Channel MOSFET with 600V Drain to Source Breakdown Voltage and 7.5A Continuous Drain Current. Features low Rds(on) of 1.2 Ohms and 48W maximum power dissipation. Operates from -55°C to 150°C, packaged in a TO-220-3 through-hole mount. Includes fast switching characteristics with turn-on delay of 16.5ns and fall time of 64.5ns. RoHS compliant and lead-free.
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Onsemi FQPF8N60CYDTU technical specifications.
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 7.5A |
| Current Rating | 7.5A |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 1.2R |
| Drain to Source Voltage (Vdss) | 600V |
| Element Configuration | Single |
| Fall Time | 64.5ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 1.255nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 48W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 48W |
| Radiation Hardening | No |
| Rds On Max | 1.2R |
| RoHS Compliant | Yes |
| Series | QFET® |
| Turn-Off Delay Time | 81ns |
| Turn-On Delay Time | 16.5ns |
| DC Rated Voltage | 600V |
| Weight | 2.565g |
| RoHS | Compliant |
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