N-Channel Power MOSFET, QFET® series, featuring 800V drain-source breakdown voltage and 8A continuous drain current. This through-hole component offers a maximum drain-source on-resistance of 1.55Ω and a power dissipation of 59W. Designed for high voltage applications, it operates within a temperature range of -55°C to 150°C and includes fast switching characteristics with turn-on delay time of 40ns and fall time of 70ns. The TO-220-3 package ensures reliable mounting.
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| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 8A |
| Current Rating | 8A |
| Drain to Source Breakdown Voltage | 800V |
| Drain to Source Resistance | 1.55R |
| Drain to Source Voltage (Vdss) | 800V |
| Drain-source On Resistance-Max | 1.55R |
| Element Configuration | Single |
| Fall Time | 70ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 9.19mm |
| Input Capacitance | 2.05nF |
| Lead Free | Lead Free |
| Length | 10.16mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 59W |
| Mount | Through Hole |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 59W |
| Rds On Max | 1.55R |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | QFET® |
| Threshold Voltage | 5V |
| Turn-Off Delay Time | 65ns |
| Turn-On Delay Time | 40ns |
| DC Rated Voltage | 800V |
| Weight | 2.27g |
| Width | 4.7mm |
| RoHS | Compliant |
These are design resources that include the Onsemi FQPF8N80C
onsemi product discontinuance notice for 4Q2021 (Batch 4). Defines Last Time Buy (June 21, 2022) and Last Ship (Dec 21, 2022) dates for various semiconductor components.
