N-Channel Power MOSFET, QFET® series, featuring 800V drain-source breakdown voltage and 8A continuous drain current. This through-hole component offers a maximum drain-source on-resistance of 1.55Ω and a power dissipation of 59W. Designed for high voltage applications, it operates within a temperature range of -55°C to 150°C and includes fast switching characteristics with turn-on delay time of 40ns and fall time of 70ns. The TO-220-3 package ensures reliable mounting.
PackageTO-220-3
Current Rating8A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Onsemi FQPF8N80C technical specifications.
General
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 8A |
| Current Rating | 8A |
| Drain to Source Breakdown Voltage | 800V |
| Drain to Source Resistance | 1.55R |
| Drain to Source Voltage (Vdss) | 800V |
| Drain-source On Resistance-Max | 1.55R |
| Element Configuration | Single |
| Fall Time | 70ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 9.19mm |
| Input Capacitance | 2.05nF |
| Lead Free | Lead Free |
| Length | 10.16mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 59W |
| Mount | Through Hole |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 59W |
| Rds On Max | 1.55R |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | QFET® |
| Threshold Voltage | 5V |
| Turn-Off Delay Time | 65ns |
| Turn-On Delay Time | 40ns |
| DC Rated Voltage | 800V |
| Weight | 2.27g |
| Width | 4.7mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FQPF8N80C Datasheet
Download the complete datasheet for Onsemi FQPF8N80C to view detailed technical specifications.
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