N-Channel Power MOSFET, QFET® series, featuring 900V drain-source breakdown voltage and 6.3A continuous drain current. This through-hole component offers a low 1.9Ω drain-source resistance (Rds On Max) and a maximum power dissipation of 60W. Designed with a TO-220-3 package, it operates within a temperature range of -55°C to 150°C and includes fast switching characteristics with a turn-off delay time of 70ns. RoHS compliant and lead-free.
PackageTO-220-3
Current Rating6.3A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Onsemi FQPF8N90C technical specifications.
General
Package/Case
TO-220-3
Continuous Drain Current (ID)
6.3A
Current Rating
6.3A
Drain to Source Breakdown Voltage
900V
Drain to Source Resistance
1.9R
Drain to Source Voltage (Vdss)
900V
Element Configuration
Single
Fall Time
70ns
Gate to Source Voltage (Vgs)
30V
Height
19.5mm
Input Capacitance
2.08nF
Lead Free
Lead Free
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
60W
Mount
Through Hole
Number of Channels
1
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
60W
Radiation Hardening
No
Rds On Max
1.9R
RoHS Compliant
Yes
Series
QFET®
Turn-Off Delay Time
70ns
Turn-On Delay Time
40ns
DC Rated Voltage
900V
Weight
2.27g
Compliance
RoHS
Compliant
Datasheet
Onsemi FQPF8N90C Datasheet
Download the complete datasheet for Onsemi FQPF8N90C to view detailed technical specifications.
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