FQPF9N50CF

N-Channel Power MOSFET featuring FRFET® technology, designed for high-voltage applications with a 500V drain-to-source breakdown voltage. This single-element transistor offers a continuous drain current of 9A and a maximum drain-source on-resistance of 850mΩ. Packaged in a TO-220F configuration for through-hole mounting, it boasts a maximum power dissipation of 44W and operates within a temperature range of -55°C to 150°C. Key switching characteristics include a turn-on delay time of 18ns and a fall time of 64ns.