N-channel Power MOSFET, 900V drain-source breakdown voltage, 8A continuous drain current, and 1.4Ω maximum drain-source on-resistance. Features a TO-220F package for through-hole mounting, 68W maximum power dissipation, and operates from -55°C to 150°C. Includes fast switching characteristics with turn-on delay of 50ns and fall time of 75ns. RoHS compliant and lead-free.
Onsemi FQPF9N90CT technical specifications.
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 8A |
| Drain to Source Breakdown Voltage | 900V |
| Drain to Source Resistance | 1.4R |
| Drain to Source Voltage (Vdss) | 900V |
| Drain-source On Resistance-Max | 1.4R |
| Element Configuration | Single |
| Fall Time | 75ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 16.07mm |
| Input Capacitance | 2.73nF |
| Lead Free | Lead Free |
| Length | 10.36mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 68W |
| Mount | Through Hole |
| Nominal Vgs | 3V |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 68W |
| Rds On Max | 1.4R |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | QFET™ |
| Threshold Voltage | 3V |
| Turn-Off Delay Time | 100ns |
| Turn-On Delay Time | 50ns |
| Weight | 2.27g |
| Width | 4.9mm |
| RoHS | Compliant |
No datasheet is available for this part.
