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Technical Specifications
Onsemi FQT3P20TF_SB82100 technical specifications.
General
| Package/Case | TO-261-4 |
| Continuous Drain Current (ID) | 670mA |
| Drain to Source Breakdown Voltage | 200V |
| Drain to Source Resistance | 2.7R |
| Drain to Source Voltage (Vdss) | 200V |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 250pF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.5W |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 2.5W |
| Rds On Max | 2.7R |
| Series | QFET® |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FQT3P20TF_SB82100 Datasheet
Download the complete datasheet for Onsemi FQT3P20TF_SB82100 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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