N-Channel Power MOSFET, 200V Drain-Source Breakdown Voltage, 7.8A Continuous Drain Current, 360mΩ Drain-Source Resistance. Features 11ns Turn-On Delay, 70ns Turn-Off Delay, and 72ns Fall Time. Operates with a 30V Gate-Source Voltage and has 510pF Input Capacitance. Packaged in TO-251-3 (IPAK) for through-hole mounting, with a maximum power dissipation of 50W and an operating temperature range of -55°C to 150°C. RoHS compliant and lead-free.
PackageTO-251-3
Current Rating7.8A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Onsemi FQU10N20CTU technical specifications.
General
| Package/Case | TO-251-3 |
| Continuous Drain Current (ID) | 7.8A |
| Current Rating | 7.8A |
| Drain to Source Breakdown Voltage | 200V |
| Drain to Source Resistance | 360mR |
| Drain to Source Voltage (Vdss) | 200V |
| Element Configuration | Single |
| Fall Time | 72ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 510pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 50W |
| Mount | Through Hole |
| Package Quantity | 70 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 50W |
| Radiation Hardening | No |
| Rds On Max | 360mR |
| RoHS Compliant | Yes |
| Series | QFET® |
| Turn-Off Delay Time | 70ns |
| Turn-On Delay Time | 11ns |
| DC Rated Voltage | 200V |
| Weight | 0.34308g |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FQU10N20CTU Datasheet
Download the complete datasheet for Onsemi FQU10N20CTU to view detailed technical specifications.
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