P-channel Power MOSFET featuring a -60V drain-to-source breakdown voltage and a continuous drain current of 9.4A. This single-element transistor offers a low on-resistance of 185mΩ and is housed in a TO-251-3 (IPAK) package suitable for through-hole mounting. Operating within a temperature range of -55°C to 150°C, it boasts a maximum power dissipation of 2.5W and includes fast switching characteristics with turn-on delay times as low as 6.5ns.
PackageTO-251-3
Current Rating-9.4A
MountingThrough Hole
PolarityP-CHANNEL
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Technical Specifications
Onsemi FQU11P06TU technical specifications.
General
Package/Case
TO-251-3
Continuous Drain Current (ID)
9.4A
Current Rating
-9.4A
Drain to Source Breakdown Voltage
-60V
Drain to Source Resistance
185mR
Drain to Source Voltage (Vdss)
-60V
Element Configuration
Single
Fall Time
45ns
Gate to Source Voltage (Vgs)
30V
Height
6.1mm
Input Capacitance
550pF
Lead Free
Lead Free
Length
6.6mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
2.5W
Mount
Through Hole
Number of Elements
1
Package Quantity
70
Packaging
Rail/Tube
Polarity
P-CHANNEL
Power Dissipation
2.5W
Radiation Hardening
No
Rds On Max
185mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
QFET®
Threshold Voltage
-4V
Turn-Off Delay Time
15ns
Turn-On Delay Time
6.5ns
DC Rated Voltage
-60V
Weight
0.34308g
Width
2.3mm
Compliance
RoHS
Compliant
Datasheet
Onsemi FQU11P06TU Datasheet
Download the complete datasheet for Onsemi FQU11P06TU to view detailed technical specifications.
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