Onsemi
FQU2N90TU-AM002
Power MOSFET, N-Channel, QFET®, 900 V, 1.7 A, 7.2 Ω, IPAK, TO-251 3L (IPAK), 5040-TUBE
PackageTO-251-3
MountingThrough Hole
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Technical Specifications
Onsemi FQU2N90TU-AM002 technical specifications.
General
| Package/Case | TO-251-3 |
| Continuous Drain Current (ID) | 1.7A |
| Drain to Source Voltage (Vdss) | 900V |
| Element Configuration | Single |
| Fall Time | 30ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 500pF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 50W |
| Mount | Through Hole |
| Package Quantity | 70 |
| Packaging | Rail/Tube |
| Radiation Hardening | No |
| Rds On Max | 7.2R |
| RoHS Compliant | Yes |
| Series | QFET® |
| Turn-Off Delay Time | 20ns |
| Turn-On Delay Time | 15ns |
| Weight | 0.34308g |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FQU2N90TU-AM002 Datasheet
Download the complete datasheet for Onsemi FQU2N90TU-AM002 to view detailed technical specifications.
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