N-Channel Power MOSFET, 900V Drain to Source Breakdown Voltage, 1.7A Continuous Drain Current, 7.2 Ohm Rds On Max. Features IPAK package (TO-251-3) for through-hole mounting. Operates from -55°C to 150°C with 50W max power dissipation. RoHS compliant and lead-free.
PackageTO-251-3
MountingThrough Hole
PolarityN-CHANNEL
Power2.5W
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Technical Specifications
Onsemi FQU2N90TU-WS technical specifications.
General
| Package/Case | TO-251-3 |
| Continuous Drain Current (ID) | 1.7A |
| Drain to Source Breakdown Voltage | 900V |
| Drain to Source Resistance | 7.2R |
| Drain to Source Voltage (Vdss) | 900V |
| Element Configuration | Single |
| Fall Time | 30ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 500pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 50W |
| Mount | Through Hole |
| Package Quantity | 70 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 2.5W |
| Radiation Hardening | No |
| Rds On Max | 7.2R |
| RoHS Compliant | Yes |
| Series | QFET® |
| Turn-Off Delay Time | 20ns |
| Turn-On Delay Time | 15ns |
| Weight | 0.34308g |
Compliance
| RoHS | Compliant |
Datasheet
No datasheet is available for this part.
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