The FQU3N40TU is a N-CHANNEL MOSFET with a drain to source breakdown voltage of 400V and a continuous drain current of 2A. It has a drain to source resistance of 3.4R and a maximum power dissipation of 30W. The device is packaged in a TO-251-3 case and is suitable for operation over a temperature range of -55°C to 150°C. The FQU3N40TU is lead free and RoHS compliant.
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Onsemi FQU3N40TU technical specifications.
| Package/Case | TO-251-3 |
| Continuous Drain Current (ID) | 2A |
| Current Rating | 2A |
| Drain to Source Breakdown Voltage | 400V |
| Drain to Source Resistance | 3.4R |
| Drain to Source Voltage (Vdss) | 400V |
| Fall Time | 25ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 230pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 30W |
| Mount | Through Hole |
| Package Quantity | 70 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 2.5W |
| Rds On Max | 3.4R |
| RoHS Compliant | Yes |
| Series | QFET® |
| Turn-Off Delay Time | 10ns |
| DC Rated Voltage | 400V |
| RoHS | Compliant |
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