P-channel power MOSFET featuring a -200V drain-source breakdown voltage and a continuous drain current of 3.7A. This device offers a low drain-source on-resistance of 1.4Ω, a maximum power dissipation of 2.5W, and operates within a temperature range of -55°C to 150°C. Packaged in a TO-251-3 (IPAK) through-hole mount, it boasts fast switching characteristics with turn-on delay times of 9ns and fall times of 25ns. RoHS compliant and lead-free.
PackageTO-251-3
Current Rating-3.7A
MountingThrough Hole
PolarityP-CHANNEL
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Technical Specifications
Onsemi FQU5P20TU technical specifications.
General
| Package/Case | TO-251-3 |
| Continuous Drain Current (ID) | 3.7A |
| Current Rating | -3.7A |
| Drain to Source Breakdown Voltage | -200V |
| Drain to Source Resistance | 1.4R |
| Drain to Source Voltage (Vdss) | 200V |
| Drain-source On Resistance-Max | 1.4R |
| Element Configuration | Single |
| Fall Time | 25ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 7.57mm |
| Input Capacitance | 430pF |
| Lead Free | Lead Free |
| Length | 6.8mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.5W |
| Mount | Through Hole |
| Package Quantity | 70 |
| Packaging | Rail/Tube |
| Polarity | P-CHANNEL |
| Power Dissipation | 2.5W |
| Radiation Hardening | No |
| Rds On Max | 1.4R |
| RoHS Compliant | Yes |
| Series | QFET™ |
| Turn-Off Delay Time | 12ns |
| Turn-On Delay Time | 9ns |
| DC Rated Voltage | -200V |
| Weight | 0.34308g |
| Width | 2.5mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FQU5P20TU Datasheet
Download the complete datasheet for Onsemi FQU5P20TU to view detailed technical specifications.
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