NPN Bipolar Junction Transistor (BJT) for surface mount applications, featuring a 60V collector-emitter breakdown voltage and a 2A maximum collector current. This component offers a low saturation voltage of 350mV and a minimum hFE of 100, with a transition frequency of 75MHz. Packaged in a TO-236-3 case, it operates within a temperature range of -55°C to 150°C and is supplied on a 3000-piece tape and reel. RoHS compliant and lead-free.
Frequency75MHz
PackageTO-236-3
Current Rating2A
MountingSurface Mount
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Technical Specifications
Onsemi FSB560 technical specifications.
General
Package/Case
TO-236-3
Collector Base Voltage (VCBO)
80V
Collector Emitter Breakdown Voltage
60V
Collector Emitter Saturation Voltage
350mV
Collector Emitter Voltage (VCEO)
60V
Collector-emitter Voltage-Max
350mV
Current Rating
2A
Emitter Base Voltage (VEBO)
5V
Frequency
75MHz
Gain Bandwidth Product
75MHz
Height
0.94mm
hFE Min
100
Lead Free
Lead Free
Length
2.92mm
Max Breakdown Voltage
60V
Max Collector Current
2A
Max Frequency
75MHz
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
500mW
Mount
Surface Mount
Number of Elements
1
Package Quantity
3000
Packaging
Tape and Reel
Polarity
NPN
Power Dissipation
500mW
Radiation Hardening
No
RoHS Compliant
Yes
Transition Frequency
75MHz
DC Rated Voltage
60V
Weight
0.03g
Width
1.4mm
Compliance
RoHS
Compliant
Datasheet
Onsemi FSB560 Datasheet
Download the complete datasheet for Onsemi FSB560 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.